Features: 20V/3.6A,RDS(ON)= 80mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 95mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabilitySOT-23-3L package designApplication Power Management in Note book Portable Equipment Battery P...
SPN2302: Features: 20V/3.6A,RDS(ON)= 80mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 95mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capa...
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20V/3.6A,RDS(ON)= 80mΩ@VGS=4.5V
20V/3.1A,RDS(ON)= 95mΩ@VGS=2.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter

|
Parameter |
Symbol |
Typical |
Unit | |
| Drain-Source Voltage |
VDSS |
20 |
V | |
| Gate Source Voltage |
VGSS |
±12 |
V | |
| Continuous Drain Current(TJ=150) | TA=25 |
ID |
2.8 |
A |
| TA=70 |
2.2 | |||
| Pulsed Drain Current |
IDM |
10 |
A | |
| Continuous Source Current(Diode Conduction) |
IS |
1.6 |
A | |
| Power Dissipation | TA=25 |
PD |
1.25 |
W |
| TA=70 |
0.8 | |||
| Operating Junction Temperature |
TJ |
150 |
| |
| Storage Temperature Range |
TSTG |
-55/150 |
| |
| Thermal Resistance-Junction to Ambient |
RJA |
100 |
/W | |
The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits,and low in-line power loss are needed in a very small outline surface mount package.