Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 15A
Power - Max: 128W
Input Capacitance (Ciss) @ Vds: 1180pF @ 25V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO220-3
Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Features: • P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
Specifications
|
Parameter |
Symbol |
Value |
Unit |
Continuous drain current
TC = 25 °C
TC = 100 °C |
ID |
-15
-10.6 |
A |
Pulsed drain current
TC=25°C |
ID puls |
-60 |
Avalanche energy, single pulse
I
D=-15 A , VDD=-25V, RGS=25Ω |
EAS |
230 |
mJ |
Reverse diode dv/dt
I
S=-15A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C |
dv/dt |
6 |
kV/µs |
| Gate source voltage |
VGS |
|
V |
Power dissipation
TC=25°C |
Ptot |
128 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +175 |
°C |
| IEC climatic category; DIN IEC 68-1 |
|
55/175/56 |
|
Parameters: | Technical/Catalog Information | SPP15P10P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 10.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1180pF @ 25V |
| Power - Max | 128W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP15P10P
SPP15P10P
SPP15P10PIN ND
SPP15P10PINND
SPP15P10PIN
|
SPP15P10P Data Sheet
