SPW20N60C2

MOSFET N-CH 600V 20A TO-247

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SeekIC No. : 004501475 Detail

SPW20N60C2: MOSFET N-CH 600V 20A TO-247

floor Price/Ceiling Price

Part Number:
SPW20N60C2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
20
13
A
Pulsed drain current, tp limited by Tjmax
ID puls
40
Avalanche energy, single pulse
ID=10A, VDD=50V
EAS
690
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V
EAR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
A
Reverse diode dv/dt
IS=20A, VDS=480V, Tj=125°C
dv/dt
6
V/ns
Gate source voltage static
VGS
±20
V
Power dissipation
TC = 25 °C
Ptot
208
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPW20N60C2
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max208W
PackagingTube
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names SPW20N60C2
SPW20N60C2
SPW20N60C2IN ND
SPW20N60C2INND
SPW20N60C2IN



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