Position: Home  > All Categories> Integrated Circuits (ICs) > SPW20N60CFD

SPW20N60CFD

MOSFET COOL MOS N-CH 650V 20.7A

product image

SPW20N60CFD Picture
See larger image
SeekIC No. : 00147787 Detail

SPW20N60CFD: MOSFET COOL MOS N-CH 650V 20.7A

SPW20N60CFD Data Sheet

floor Price/Ceiling Price

US $ 1.94~3.29 / Piece | Get Latest Price
Part Number:
SPW20N60CFD
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.29
  • $2.63
  • $2.4
  • $1.94
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20.7 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.22 Ohms
Continuous Drain Current : 20.7 A


Features:

· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
20.7
13.1
A
Pulsed drain current, tp limited by Tjmax
ID puls
52
Avalanche energy, single pulse
ID= 10A, VDD=50V
EAS
690
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V
EAR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
A
Reverse diode dv/dt
IS=20.7A, VDS=480V, Tj=125°C
dv/dt
40
V/ns
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)

VGS
±30
Power dissipation
TC = 25 °C
Ptot
208
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPW20N60CFD
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C20.7A
Rds On (Max) @ Id, Vgs220 mOhm @ 13.1A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max208W
PackagingTube
Gate Charge (Qg) @ Vgs124nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW20N60CFD
SPW20N60CFD
SPW20N60CFDIN ND
SPW20N60CFDINND
SPW20N60CFDIN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Filters
PICO2205A
PICO2204A
Line Protection, Backups
BX0023
A20B-1008-0550
Cables, Wires
821-0814-a
415-0100-150
View more