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SSM3K11T

Features: • Ultra-high-speed switching achieved using a lateral structure ton = 6.4 ns, toff = 4.9 ns• Low reverse transfer capacitance: Crss = 6.8 pF (typ.)• Thin package• Low ON-resistance: RDS (ON) = 1.2 Ω (typ.) @VGS = 2.5 V• Direct drive by CMOS possiblePin...

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SeekIC No. : 004503955 Detail

SSM3K11T: Features: • Ultra-high-speed switching achieved using a lateral structure ton = 6.4 ns, toff = 4.9 ns• Low reverse transfer capacitance: Crss = 6.8 pF (typ.)• Thin package• L...

SSM3K11T Data Sheet

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Part Number:
SSM3K11T
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ultra-high-speed switching achieved using a lateral structure ton = 6.4 ns, toff = 4.9 ns
• Low reverse transfer capacitance: Crss = 6.8 pF (typ.)
• Thin package
• Low ON-resistance: RDS (ON) = 1.2 Ω (typ.) @VGS = 2.5 V
• Direct drive by CMOS possible


Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDS
40
V
Gate-Source voltage
VGSS
±10
V
Drain current DC
ID
500
mA
Pulse
IDP (Note2)
2
A
Drain power dissipation
PD (Note1)
1250
mW
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note1: Mounted on FR4 board
            (25.4 mm * 25.4 mm * 1.6 t, Cu pad: 645 mm2, t = 10 s)
Note2: The pulse width limited by max channel temperature.


Description

The SSM3K11T contained herein in subject to change without notice; likewise, product development may be discontinued.




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