SSP60N05

The SSP60N05 is designed as one kind of N-channel power MOSFET that has some points of features:(1)lower RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)extended safe operating area;(6)lower input capacitance;(7)improved high temperature reliability.

The absolute maximum ratings of the SSP60N05 can be summarized as:(1)drain-to-source voltage: 50 V;(2)continuous drain current (Tc=25): 60 A;(3)continuous drain current (Tc=100): 42 A;(4)drain current-pulsed: 240 A;(5)single pulsed avalanche energy: 216 mJ;(6)avalanche current: 60 A;(7)operating junction and storage temperature range: -55 to +175 ;(8)maximum lead temperature for soldering purposes, 1/8" from case for 5-seconds: 300 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .