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SSP6N70A

MOSFET TO-220

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SeekIC No. : 00163741 Detail

SSP6N70A: MOSFET TO-220

SSP6N70A Data Sheet

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Part Number:
SSP6N70A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 700 V
Continuous Drain Current : 6 A Resistance Drain-Source RDS (on) : 1.8 Ohms
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220    

Description

Gate-Source Breakdown Voltage :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 700 V
Continuous Drain Current : 6 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 1.8 Ohms


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 700V
Low R DS(ON) : 1.552  (Typ.)


Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 700 V
ID Drain Current - Continuous (TC = 25°C)
 6 A
Drain Current - Continuous (TC = 100°C) 3.8
IDM Drain Current - Pulsed 24 A
VGSS Gate-Source Voltage   V
EAS Single Pulsed Avalanche Energy 582 mJ
IAR Avalanche Current 6 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 2.5 V/ns
PD Total Power Dissipation (TC=25 OC)
Linear Derating Factor		 130 W
1.04 W/°C
TJ, Tstg Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



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