SSP6N60

The features of SSP6N60 are as follows: (1)lower RDS(ON); (2)improved inductive ruggedness; (3)fast switching times; (4)rugged polysilicon gate cell structure; (5)lower input capacitance; (6)extended safe opearting area; (7)improved high temperature reliability.

The absolute maximum ratings of the SSP6N60 are: (1)drain-source voltage: 600Vdc; (2)drain-gate voltage: 600Vdc; (3)gate-source voltage: ±20Vdc; (4)continuous drain current Tc=25: 6.0Adc; (5)continuous drain current Tc=100: 4.0Adc; (6)drain current-pulsed: 24Adc; (7)gate current-pulsed: ±1.5Adc; (8)single pulsed avalanche energy: 570mJ; (9)avalanche current: 6.0A; (10)total power dissipation at Tc=25: 125Watts; (11)opearting and storage junction temperature range: -55 to +150; (12)maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds.

The following is about the electrical characteristics of SSP6N60: (1)drain-source breakdown voltage: 600V min at VGS=0V, ID=250A; (2)gate threshold voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (3)gate-source leakage forward: 100nA max at VGS=20V; (4)gate-source leakage reverse: -100nA max at VGS=-20V; (5)zero gate voltage drain current: 250A max at VDS=max. rating, VGS=0V; (6)on-state drain-source current: 6.0A min at VDS10V, ID=10V; (7)forward transconductance: 3.0 min at VDS50V, ID=3.0V; (8)input capacitance: 1800pF typical at VGS=0V, VDS=25V, f=1.0MHz; (9)output capacitance: 350pF typical at VGS=0V, VDS=25V, f=1.0MHz; (10)reverse transfert capacitance: 150pF typical at VGS=0V, VDS=25V, f=1.0MHz; (11)gate-source charge: 9.3nC at VGS=10V, ID=6.0A, VDS=0.8 max. rating.