Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 900VLowR DS(ON) : 1.829 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source Voltage 900 ...
SSP6N90A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 900VLowR DS(ON) : ...
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| Symbol | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 900 | V |
| ID | Drain Current - Continuous (TC = 25°C) |
6 | A |
| Drain Current - Continuous (TC = 100°C) | 3.8 | ||
| IDM | Drain Current - Pulsed | 24 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy | 667 | mJ |
| IAR | Avalanche Current | 6 | A |
| EAR | Repetitive Avalanche Energy | 16 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 1.5 | V/ns |
| PD | Total Power Dissipation (TC=25 OC) Linear Derating Factor |
160 | W |
| 1.28 | W/°C | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |