SST25VF010 Selling Leads, Price trend, SST25VF010 DataSheet download, circuit diagram from SeekIC.com

Features: • Single 2.7-3.6V Read and Write Operations• Serial Interface Architecture SPI Compatible: Mode 0 and Mode 3• 20 MHz Max Clock Frequency• Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention• Low Power Consumption...

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SeekIC No. : 004505200 Detail

SST25VF010: Features: • Single 2.7-3.6V Read and Write Operations• Serial Interface Architecture SPI Compatible: Mode 0 and Mode 3• 20 MHz Max Clock Frequency• Superior Reliability End...

SST25VF010 Data Sheet

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Part Number:: SST25VF010
Supply Ability:: 5000

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Upload time: 2025/12/23

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Product Details

Description

Features:

• Single 2.7-3.6V Read and Write Operations
• Serial Interface Architecture
    SPI Compatible: Mode 0 and Mode 3
• 20 MHz Max Clock Frequency
• Superior Reliability
    Endurance: 100,000 Cycles (typical)
    Greater than 100 years Data Retention
• Low Power Consumption:
    Active Read Current: 7 mA (typical)
    Standby Current: 8 µA (typical)
• Flexible Erase Capability
    Uniform 4 KByte sectors
    Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
    Chip-Erase Time: 70 ms (typical)
    Sector- or Block-Erase Time: 18 ms (typical)
    Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
    Decrease total chip programming time over Byte-Program operations
• End-of-Write Detection
    Software Status
• Hold Pin (HOLD#)
    Suspends a serial sequence to the memory without deselecting the device
• Write Protection (WP#)
    Enables/Disables the Lock-Down function of the status register
• Software Write Protection
    Write protection through Block-Protection bits in status register
• Packages Available
    8-lead SOIC (4.9mm x 6mm)
    8-contact WSON

Pinout

Connection Diagram

Specifications

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . -0.5V to V_DD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . .-2.0V to V_DD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Description

SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010 SPI serial flash memory is manufactured with SST's proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The SST25VF010 device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010 device operates with a single 2.7-3.6V power supply.

The SST25VF010 device is offered in both 8-lead SOIC and 8-contact WSON packages. See Figure 1 for the pin assignments.

SST25VF010

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