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STB100NF04L

Features: ·TYPICAL RDS(on) = 0.0036 W·LOW THRESHOLD DRIVE·100% AVALANCHE TESTED·LOGIC LEVEL DEVICEApplication·HIGH CURRENT, HIGH SWITCHING SPEED·MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC & DC-AC CONVERTERS·SOLENOID AND RELAY DRIVERSSpecifications Symbol Parameter Value Unit VDSV...

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SeekIC No. : 004507059 Detail

STB100NF04L: Features: ·TYPICAL RDS(on) = 0.0036 W·LOW THRESHOLD DRIVE·100% AVALANCHE TESTED·LOGIC LEVEL DEVICEApplication·HIGH CURRENT, HIGH SWITCHING SPEED·MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC & DC-AC CON...

STB100NF04L Data Sheet

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Part Number:
STB100NF04L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·TYPICAL RDS(on) = 0.0036 W
·LOW THRESHOLD DRIVE
·100% AVALANCHE TESTED
·LOGIC LEVEL DEVICE


Application

·HIGH CURRENT, HIGH SWITCHING SPEED
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC & DC-AC CONVERTERS
·SOLENOID AND RELAY DRIVERS


Specifications

Symbol
 Parameter
Value
Unit
VDS

VDGR

VGS

ID(*)

ID

IDM(•)

Ptot



dv/dt (1)

EAS (2)

Tstg

Tj
 Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 kW)

Gate- source Voltage

Drain Current (continuos) at TC = 25°C

Drain Current (continuos) at TC = 100°C

Drain Current (pulsed)

Total Dissipation at TC = 25°C

Derating Factor

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature
40

40

± 16

100

70

400

300

2

3.6

1.4

-65 to 175

175
V

V

V

A

A

A

W

W/°C

V/ns

J

°C

°C



Description

This STB100NF04L is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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