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STB11NB40

Features: ` TYPICAL RDS(on) = 0.48 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDINGEQUIPMENT AND UNINTERRUPTIBLEPOWER ...

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STB11NB40: Features: ` TYPICAL RDS(on) = 0.48 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING...

STB11NB40 Data Sheet

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Part Number:
STB11NB40
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.48
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING
  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
400
V
VDGR Drain-gate Voltage (RGS = 20 k)
400
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
10.7
A
ID Drain Current (continuos) at TC = 100
6.7
A
IDM(1) Drain Current (pulsed)
42.8
A
Ptot Total Dissipation at TC = 25
125
W
  Derating Factor
1.0
W/
dv/dt (2) Storage Temperature
4.5
 V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
150
Note: 1. Pulse width limited by safe operating area
          2. ISD 11A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage STB11NB40 MESH OVERLAY™ process, STMicro electronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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