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STB11NM60FD-1

Features: ` TYPICAL RDS(on) = 0.40` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE `TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDSApplication· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENTS...

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STB11NM60FD-1: Features: ` TYPICAL RDS(on) = 0.40` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE `TIGHT PROCESS CONTROL AND HIGH MAN...

STB11NM60FD-1 Data Sheet

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Part Number:
STB11NM60FD-1
Supply Ability:
5000

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.40
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
`TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

</TABLE
Symbol Parameter
Value
Unit
STP11NM60FD
STB11NM60FD
STB11NM60FD-1		 STP11NM60FDFP
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
11
11(*)
A
ID Drain Current (continuos) at TC = 100
7
7(*)
A
IDM(`) Drain Current (pulsed)
44
44(*)
A
PTOT Total Dissipation at TC = 25
160
35
W
Derating Factor
0.88
0.28
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
VISO Insulation Winthstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
(`)Pulse width limited by safe operating area
(1) ISD 11A, di/dt 400 A/s, VDD V(BR)/DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. STB11NM60FD-1 is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.




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