Position: Home  > All Categories> Integrated Circuits (ICs) > STB12NM50FD

STB12NM50FD

Features: ` TYPICAL RDS(on) = 0.32 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDSApplication· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT...

product image

STB12NM50FD Picture
See larger image
SeekIC No. : 004507090 Detail

STB12NM50FD: Features: ` TYPICAL RDS(on) = 0.32 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MA...

STB12NM50FD Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB12NM50FD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.32
`  HIGH dv/dt AND AVALANCHE CAPABILITIES
`  100% AVALANCHE TESTED
`  LOW INPUT CAPACITANCE AND GATE CHARGE
`  LOW GATE INPUT RESISTANCE
`  TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
TO-220/ D2PAK/I2PAK
TO-220FP
 TO-247
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
12
12(*)
14
A
ID Drain Current (continuos) at TC = 100
7.5
7.5(*)
8.8
A
IDM() Drain Current (pulsed)
48
48(*)
56
A
PTOT Total Dissipation at TC = 25
160
35
175
W
Derating Factor
1.28
0.28
1.4
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
- 65 to 150
- 65 to 150

() Pulse width limited by safe operating area
(1) ISD12A, di/dt 400 A, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The FDmesh™ associates of the STB12NM50FD all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
View more