STB13005-1

Transistors Switching (Resistor Biased) H/V FST SWCH PW TRNS NPN

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STB13005-1 Picture
SeekIC No. : 00223331 Detail

STB13005-1: Transistors Switching (Resistor Biased) H/V FST SWCH PW TRNS NPN

floor Price/Ceiling Price

US $ .23~.27 / Piece | Get Latest Price
Part Number:
STB13005-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1450
  • 1450~2000
  • 2000~5000
  • 5000~10000
  • Unit Price
  • $.27
  • $.25
  • $.24
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Mounting Style : Through Hole Package / Case : TO-262-3
Collector- Emitter Voltage VCEO Max : 400 V Continuous Collector Current : 4 A
Power Dissipation : 75 W Maximum Operating Temperature : + 150 C
Packaging : Tube    

Description

Typical Input Resistor :
Typical Resistor Ratio :
Maximum Operating Frequency :
Peak DC Collector Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 400 V
Continuous Collector Current : 4 A
Package / Case : TO-262-3
Power Dissipation : 75 W


Features:

` MEDIUM VOLTAGE CAPABILITY
` NPN TRANSISTORS
` LOW SPREAD OF DYNAMIC PARAMETERS
` MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
` VERY HIGH SWITCHING SPEED
` THROUGH-HOLE I2PAK (TO-262) POWER PACKAGEIN TUBE (SUFFIX "-1")




Application

·ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
·SWITCH MODE POWER SUPPLIES



Specifications

Symbol Parameter
Value
Unit
VCES Collector-Emit ter Voltage (VBE = 0)
700
V
VCEO Collector-Emit ter Voltage (IB = 0)
400
V
VEBO Emitter-Base Voltage (IC = 0)
9
V
IC Collector Current
4
A
ICM Collector Peak Current (tp < 5 ms)
8
A
IB Base Current
2
A
IBM Base Peak Current (tp < 5 ms)
4
A
Ptot Total Dissipation at Tc = 25
75
W
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150



Description

The STB13005-1 are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.




Parameters:

Technical/Catalog InformationSTB13005-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)4A
Power - Max75W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 4A
Frequency - Transition-
Current - Collector Cutoff (Max)5mA
Mounting TypeThrough Hole
Package / CaseI&sup2;Pak, TO-262 (3 straight leads + tab)
PackagingTube
Drawing Number497; 0004982; 1; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB13005 1
STB130051



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