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STB140NF75-1

Features: ` TYPICAL RDS(on) = 0.0065 ` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGEApplication· HIGH CURRENT, HIGH SWITCHING SPEED· SOLENOID AND RELAY DRIVERS· AUTOMOTIVE 42V BATTERY DRIVERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 75 ...

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STB140NF75-1: Features: ` TYPICAL RDS(on) = 0.0065 ` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGEApplication· HIGH CURRENT, HIGH SWITCHING SPEED· SOLENOID AND RELAY DRIVERS· AUTOMOTIVE 42V BATTERY DRIVERSSp...

STB140NF75-1 Data Sheet

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Part Number:
STB140NF75-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.0065
 ` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE


Application

· HIGH CURRENT, HIGH SWITCHING SPEED
· SOLENOID AND RELAY DRIVERS
· AUTOMOTIVE 42V BATTERY DRIVERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
75
V
VDGR Drain-gate Voltage (RGS = 20 k)
75
V
VGS Gate- source Voltage
±20
V
ID(**) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
100
A
IDM() Drain Current (pulsed)
480
A
Ptot Total Dissipation at TC = 25
310
W
Derating Factor
2.08
W/
dv/dt (1) Peak Diode Recovery voltage slope
10
V/ns
EAS(2) Single Pulse Avalanche Energy
750
mJ
Tstg Storage Temperature
-55 to 175
Tj Operating Junction Temperature
(`) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD120A, di/dt400A/s, VDD V(BR)DSS, TjTJMAX
(2) Starting Tj = 25 ,ID = 60 A, VDD = 30V


Description

This STB140NF75-1 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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