Position: Home  > All Categories> Integrated Circuits (ICs) > STB140NF75

STB140NF75

Features: ` TYPICAL RDS(on) = 0.0065 ` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGEApplication· HIGH CURRENT, HIGH SWITCHING SPEED· SOLENOID AND RELAY DRIVERS· AUTOMOTIVE 42V BATTERY DRIVERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 75 ...

product image

STB140NF75 Picture
See larger image
SeekIC No. : 004507099 Detail

STB140NF75: Features: ` TYPICAL RDS(on) = 0.0065 ` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGEApplication· HIGH CURRENT, HIGH SWITCHING SPEED· SOLENOID AND RELAY DRIVERS· AUTOMOTIVE 42V BATTERY DRIVERSSp...

STB140NF75 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB140NF75
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.0065
 ` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE


Application

· HIGH CURRENT, HIGH SWITCHING SPEED
· SOLENOID AND RELAY DRIVERS
· AUTOMOTIVE 42V BATTERY DRIVERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
75
V
VDGR Drain-gate Voltage (RGS = 20 k)
75
V
VGS Gate- source Voltage
±20
V
ID(**) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
100
A
IDM() Drain Current (pulsed)
480
A
Ptot Total Dissipation at TC = 25
310
W
Derating Factor
2.08
W/
dv/dt (1) Peak Diode Recovery voltage slope
10
V/ns
EAS(2) Single Pulse Avalanche Energy
750
mJ
Tstg Storage Temperature
-55 to 175
Tj Operating Junction Temperature
(`) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD120A, di/dt400A/s, VDD V(BR)DSS, TjTJMAX
(2) Starting Tj = 25 ,ID = 60 A, VDD = 30V


Description

This STB140NF75 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Kits
IT243
UVSC-110-4E1
RF and RFID
X3C26P1-30S
1P620S
Tools
TCP202
G084SN05 V.3
Undefined Category
VI-B63-IU
X27 589
Resistors
A101G
3006P-1-205LF
Transformers
TM-09210
BV222-1-00992
View more