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STB14NK50Z

Features: ` TYPICAL RDS(on) = 0.34 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES ` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC· LIGHTINGS...

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SeekIC No. : 004507102 Detail

STB14NK50Z: Features: ` TYPICAL RDS(on) = 0.34 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES ` VERY GOOD MANUFACTURING REPEATIBILITYApplication...

STB14NK50Z Data Sheet

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Part Number:
STB14NK50Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.34
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES
`  VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol Parameter
Value
Unit
STP14NK50Z
STB14NK50Z/-1
STP14NK50ZFP
STW14NK50Z
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
14
14(*)
14
A
ID Drain Current (continuos) at TC = 100
7.6
7.6(*)
7.6
A
IDM() Drain Current (pulsed)
48
48(*)
48
A
PTOT Total Dissipation at TC = 25
150
35
150
W
Derating Factor
1.20
0.28
1.20
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
4000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150
() Pulse width limited by safe operating area
(1) ISD 14A, di/dt200A/s, VDDV(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STB14NK50Z series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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