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STB19NB20-1

Features: ` TYPICAL RDS(on) = 0.15 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR TELECOM,INDUSTRIAL AND CONSUMER ENVIRONMENTSpecifica...

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SeekIC No. : 004507120 Detail

STB19NB20-1: Features: ` TYPICAL RDS(on) = 0.15 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH M...

STB19NB20-1 Data Sheet

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Part Number:
STB19NB20-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 0.15
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  NEW HIGH VOLTAGE BENCHMARK
 `  GATE CHARGE MINIMIZED


Application

 ·  HIGH CURRENT, HIGH SPEED SWITCHING
 ·  SWITH MODE POWER SUPPLIES (SMPS)
 ·  DC-AC CONVERTERS FOR TELECOM,INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol Parameter
Value
Unit
STP(B)19NB20(-1) STP19NB20FP
VDS Drain-source Voltage (VGS = 0)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)
200
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
19
10
A
ID Drain Current (continuos) at TC = 100
12
6.0
A
IDM() Drain Current (pulsed)
76
76
A
Ptot Total Dissipation at TC = 25
125
35
W
Derating Factor
1
0.28
W/
dv/dt (1) Peak Diode Recovery voltage slope
5.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
65 to 150
Tj
 Max. Operating Junction Temperature
150

(•)Pulse width limited by safe operating area
(1)ISD 19 A, di/dt 300A/s, VDD V(BR)DSS,Tj TJMAX




Description

Using the latest high voltage MESH OVERLAY™ process of the STB19NB20-1, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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