STB19NB20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.18 Ohms


Features:

  `  TYPICAL R<sub>DS(on)</sub> = 0.150
  `  EXTREMELY HIGH dv/dt CAPABILITY
  `  100% AVALANCHE TESTED
  `  VERY LOW INTRINSIC CAPACITANCES
  `  GATE CHARGE MINIMIZED
  `  FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

  ·  HIGH CURRENT, HIGH SPEED SWITCHING
  ·  SWITCH MODE POWER SUPPLIES (SMPS)
  ·  DC-AC CONVERTERS FOR WELDING
     EQUIPMENT AND UNINTERRUPTIBLE
     POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	200	V
VDGR	Drain-gate Voltage (RGS = 20 k)	200	V
VGS	Gate- source Voltage	±30	V
ID	Drain Current (continuos) at TC = 25	19	A
ID	Drain Current (continuos) at TC = 100	12	A
IDM(•)	Drain Current (pulsed)	76	A
Ptot	Total Dissipation at TC = 25	125	W
	Derating Factor	1	W/
dv/dt (1)	Storage Temperature	5.5	V/ns
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(•) Pulse width limited by safe operating area
( 1) I_SD 19A, di/dt 300 A/s, V_DD V_(BR)DSS, T_j T_JMAX


Description

Using the latest high voltage MESH OVERLAY™ process of the STB19NB20, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.