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STB19NF20

MOSFET 200V 0.15Ohm 15A N-Channel

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SeekIC No. : 00145717 Detail

STB19NF20: MOSFET 200V 0.15Ohm 15A N-Channel

STB19NF20 Data Sheet

floor Price/Ceiling Price

US $ .77~1.21 / Piece | Get Latest Price
Part Number:
STB19NF20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.21
  • $.97
  • $.88
  • $.77
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.16 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.16 Ohms


Features:

Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances


Application

Switching application


Specifications

Symbol Parameter
Value
Unit
TO-220 / D²PAK
TO-220FP
VDS Drain-source voltage (VGS = 0)
200
V
VGS Gate-source voltage
± 20
V
ID Drain current (continuous) at TC = 25°C
15
15(1)
A
ID Drain current (continuous) at TC=100°C
9.45
9.45(1)
A
IDM(2) Drain current (pulsed)
60
60 (1)
A
PTOT Total dissipation at TC = 25°C
90
25
W
  Derating factor
0.72
0.2
W/°C
VISO Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
dv/dt(3) Peak diode recovery voltage slope
15
V/ns
TJ
Tstg		 Operating junction temperature
Storage temperature
-55 to 150
°C



Description

This Power MOSFET of the STB19NF20 is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.




Parameters:

Technical/Catalog InformationSTB19NF20
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs160 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max90W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB19NF20
STB19NF20
497 7941 1 ND
49779411ND
497-7941-1



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