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STB20NM50

Features: · HIGH dv/dt AND AVALANCHE CAPABILITIES· 100% AVALANCHE TESTED· LOW INPUT CAPACITANCE AND GATE CHARGE· LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficienci...

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SeekIC No. : 004507128 Detail

STB20NM50: Features: · HIGH dv/dt AND AVALANCHE CAPABILITIES· 100% AVALANCHE TESTED· LOW INPUT CAPACITANCE AND GATE CHARGE· LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for inc...

STB20NM50 Data Sheet

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Part Number:
STB20NM50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/16

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Product Details

Description



Features:

· HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies.




Specifications

Symbol Parameter
Value
Unit
    TO-220/
D²PAK/I²PAK		 TO-220FP  
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
20
20(Note 3)
A
ID Drain Current (continuous) at TC = 100
12.6
12.6(Note 3)
A
IDM Note 2 Drain Current (pulsed)
80
80(Note 3)
A
PTOT Total Dissipation at TC = 25
192
45
W
Derating Factor
1.2
0.36
W/
dv/dt Note 1 Peak Diode Recovery voltage slope
15
V/ns
VISO Insulation Withstand Volatge (DC)
-
2000
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-65 to 150



Description

The STB20NM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.




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