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STB20NM50FD-1

Features: ` TYPICAL RDS(on) = 0.22` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDSApplication· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENTS...

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STB20NM50FD-1: Features: ` TYPICAL RDS(on) = 0.22` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MAN...

STB20NM50FD-1 Data Sheet

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Part Number:
STB20NM50FD-1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.22
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
20
A
ID Drain Current (continuos) at TC = 100
14
A
IDM(`) Drain Current (pulsed)
80
A
PTOT Total Dissipation at TC = 25
192
W
Derating Factor
1.2
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
150
(`) Pulse width limited by safe operating area
(1) ISD 20A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX.


Description

The STB20NM50FD-1 FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.




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