Position: Home  > All Categories> Integrated Circuits (ICs) > STB22NS25Z

STB22NS25Z

Features: ` TYPICAL RDS(on) = 0.13 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH MODE POWER SUPPLIES (SMPS)· DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENTSpecifications Symbol Parameter Value Unit VD...

product image

STB22NS25Z Picture
See larger image
SeekIC No. : 004507140 Detail

STB22NS25Z: Features: ` TYPICAL RDS(on) = 0.13 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH MODE POWER SUPPLIES (SMPS)· DC-DC CONVERTERS FOR TEL...

STB22NS25Z Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB22NS25Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.13
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · SWITH MODE POWER SUPPLIES (SMPS)
 · DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
250
V
VDGR Drain-gate Voltage (RGS = 20 k)
250
V
VGS Gate- source Voltage
±20
V
ID Drain Current (continuos) at TC = 25
22
A
ID Drain Current (continuos) at TC = 100
13.9
A
IDM() Drain Current (pulsed)
88
A
PTOT Total Dissipation at TC = 25
135
W
  Derating Factor
1.07
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2500
V
dv/dt (1) Peak Diode Recovery voltage slope
5
 V/ns
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(1) ISD 22A, di/dt200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

Using the latest high voltage MESH OVERLAY™ process, STB22NS25Z STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Undefined Category
VI-B63-IU
X27 589
Kits
IT243
UVSC-110-4E1
Isolators
HCPL062N
HCPL316J
RF and RFID
X3C26P1-30S
1P620S
Test Equipment
TOP853
TOP2005
View more