MOSFET N-Channel 650V 0.16 Ohms 19A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
| Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 19 A | ||
| Resistance Drain-Source RDS (on) : | 0.16 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | D2PAK | Packaging : | Reel |
| Technical/Catalog Information | STB24NM65N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 19A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 9.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2500pF @ 50V |
| Power - Max | 160W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STB24NM65N STB24NM65N 497 7002 2 ND 49770022ND 497-7002-2 |