STB85NF55LT4

MOSFET N-Ch 55 Volt 80 Amp

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SeekIC No. : 00157266 Detail

STB85NF55LT4: MOSFET N-Ch 55 Volt 80 Amp

floor Price/Ceiling Price

US $ 1.01~1.37 / Piece | Get Latest Price
Part Number:
STB85NF55LT4
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Unit Price
  • $1.37
  • $1.13
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  • Processing time
  • 15 Days
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Upload time: 2026/1/16

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

· TYPICAL RDS(on) = 0.0060 W
· LOW THRESHOLD DRIVE
· LOGIC LEVEL DEVICE



Application

· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC CONVERTERS
· AUTOMOTIVE ENVIRONMENT



Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 55 V
VDGR Drain-gate Voltage (RGS = 20 kW) 55 V
VGS Gate- source Voltage ± 15 V
ID Drain Current (continuos) at TC = 25°C 80 A
ID Drain Current (continuos) at TC = 100°C 80 A
IDM (l) Drain Current (pulsed) 320 A
PTOT Total Dissipation at TC = 25°C 300 W
  Derating Factor 2.0 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns
EAS (2) Single Pulse Avalanche Energy 980 mJ
Tstg Storage Temperature 55 to 175 °C
Tj Max. Operating Junction Temperature °C



Description

This STB85NF55LT4 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTB85NF55LT4
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs8 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 4050pF @ 25V
Power - Max300W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs110nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB85NF55LT4
STB85NF55LT4
497 5732 1 ND
49757321ND
497-5732-1



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