STC5NF20V

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.037 Ohms
Package / Case : TSSOP-8
Configuration : Dual Common Drain Dual Source


Features:

`  TYPICAL R<sub>DS(on)</sub> = 0.030 @ 4.5 V
`  TYPICAL R_DS(on) = 0.037 @ 2.7 V
`  ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)
`  STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY


Application

· DC MOTOR DRIVE
· DC-DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
· POWER MANAGEMENT IN PORTABLE/DESKTOP PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	20	V
VDGR	Drain-gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	±12	V
ID	Drain Current (continuous) at TC = 25	5	A
ID	Drain Current (continuous) at TC = 100	3	A
IDM(`)	Drain Current (pulsed)	20	A
Ptot	Total Dissipation at TC = 25	1.5	W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STC5NF20V is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STC5NF20V
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	40 mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) @ Vds	460pF @ 15V
Power - Max	1.5W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	11.5nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	*
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	STC5NF20V STC5NF20V 497 3151 6 ND 49731516ND 497-3151-6