Features: ` TYPICAL RDS(on) = 0.003 @ 10V` TYPICAL RDS(on) = 0.005 @ 5V` RDS(ON) * Qg INDUSTRY's BENCHMARK` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` LOW THRESHOLD DEVICE` SURFACE MOUNTING POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application· SPECIFICALLY DESIGNED AND OPTIMISED FOR...
STD150NH02L: Features: ` TYPICAL RDS(on) = 0.003 @ 10V` TYPICAL RDS(on) = 0.005 @ 5V` RDS(ON) * Qg INDUSTRY's BENCHMARK` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` LOW THRESHOLD DEVICE` SURFACE MOUNTIN...
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|
Symbol |
Parameter |
Value |
Unit |
| Vspik(1) | Drain-source Voltage Rating | 30 | V |
|
VDS |
Drain-source Voltage (VGS = 0) |
24 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
24 |
V |
|
VGS |
Gate- source Voltage |
±20 |
V |
|
ID |
Drain Current (continuos) at TC = 25 |
150 |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
95 |
A |
|
IDM (2) |
Drain Current (pulsed) |
600 |
A |
|
Ptot |
Total Dissipation at TC = 25 |
125 |
W |
| Derating Factor |
0.83 |
W/ | |
|
EAS (3) |
Single Pulse Avalanche Energy |
900 |
mJ |
|
Tstg |
Storage Temperature |
-55 to 175 |
|
|
Tj |
Max. Operating Junction Temperature |
The STD150NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This novel 0.6µ process utilizes also unique metallization techniques that coupled to a "bondless" assembly technique result in outstanding performance with standard DPAK outline. It is therefore ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.