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STD30NE06

MOSFET N-CH 60V 30A

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SeekIC No. : 00165353 Detail

STD30NE06: MOSFET N-CH 60V 30A

STD30NE06 Data Sheet

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Part Number:
STD30NE06
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 30 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

 ` TYPICAL RDS(on) = 0.025
 ` EXCEPTIONAL dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` LOW GATE CHARGE 100 oC
 ` APPLICATION ORIENTED CHARACTERIZATION
 ` FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · SOLENOID AND RELAY DRIVERS
 · MOTOR CONTROL, AUDIO AMPLIFIERS
 · DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
30
A
ID Drain Current (continuous) at TC = 100
21
A
IDM (•) Drain Current (pulsed)
120
A
PTOT Total Dissipation at TC = 25
55
W
  Derating Factor
0.37
W/
dv/dt Peak Diode Recovery voltage slope
7
V/ns
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(`) Pulse width limited by safe operating area
(1) ISD 20 A, di/dt 300 A/ms, VDD V(BR)DSS, TjTJMAX


Description

This STD30NE06 Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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