STD30NE06L

MOSFET N-Ch 60 Volt 30 Amp

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SeekIC No. : 00163525 Detail

STD30NE06L: MOSFET N-Ch 60 Volt 30 Amp

floor Price/Ceiling Price

Part Number:
STD30NE06L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 30 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

 ` TYPICAL RDS(on) = 0.025  
 ` EXCEPTIONAL dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` LOW GATE CHARGE 100oC
 ` APPLICATIONORIENTED CHARACTERIZATION
 ` ADD SUFFIX "T4" FORORDERING IN TAPE & REEL



Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · SOLENOID AND RELAY DRIVERS
 · MOTOR CONTROL, AUDIO AMPLIFIERS
 · DC-DC & DC-AC CONVERTERS



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60

V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
30
A
ID Drain Current (continuous) at TC = 100
21
A
IDM () Drain Current (pulsed)
120
A
PTOT Total Dissipation at TC = 25
55
W
Derating Factor
0.37
W/
dv/dt(1) Peak Diode Recovery voltage slope
7
V/ns
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(`) Pulse width limited by safe operating area
(1) ISD 30 A, di/dt 300 A/ms, VDD V(BR)DSS, TjTJMAX



Description

This STD30NE06L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTD30NE06L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs28 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2370pF @ 25V
Power - Max55W
PackagingTube
Gate Charge (Qg) @ Vgs41nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD30NE06L
STD30NE06L



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