STD30NF06

MOSFET N-Ch 60 Volt 28 Amp

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SeekIC No. : 00162677 Detail

STD30NF06: MOSFET N-Ch 60 Volt 28 Amp

floor Price/Ceiling Price

Part Number:
STD30NF06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.028 Ohms


Features:

 `  TYPICAL RDS(on) = 0.020
 `  EXCEPTIONAL dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
 `  SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

 ·  HIGH CURRENT, HIGH SWITCHING SPEED
 ·  MOTOR CONTROL , AUDIO AMPLIFIERS
 ·  SOLENOID AND RELAY DRIVERS
 ·  DC-DC & DC-AC CONVERTERS



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60

V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
28
A
ID Drain Current (continuous) at TC = 100
20
A
IDM(`) Drain Current (pulsed)
112
A
Ptot Total Dissipation at TC = 25
70
W
  Derating Factor
0.47
W/
dv/dt(1) Peak Diode Recovery voltage slope
10
V/ns
EAS(2) Peak Diode Recovery voltage slope
230
mJ
Tstg Storage Temperature
-55 to 175
Tj Max. Operating Junction Temperature
(`) Pulse width limited by safe operating area.
(1) ISD 28A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25, ID = 15A, VDD = 30V



Description

This STD30NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment  steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTD30NF06
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C28A
Rds On (Max) @ Id, Vgs28 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1750pF @ 25V
Power - Max70W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs58nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD30NF06
STD30NF06
497 5734 6 ND
49757346ND
497-5734-6



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