Features: ` TYPICAL RDS(on) = 0.022` EXCEPTIONAL dv/dt CAPABILITY` LOGIC LEVEL GATE DRIVE` ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL` ADD SUFFIX -1 FOR ORDERING IN IPAK` CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONSApplication· HIGH-EFFICIENCY DC-DC CONVERTERS· MOTOR CONTROL, AUDIO...
STD30NF06L: Features: ` TYPICAL RDS(on) = 0.022` EXCEPTIONAL dv/dt CAPABILITY` LOGIC LEVEL GATE DRIVE` ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL` ADD SUFFIX -1 FOR ORDERING IN IPAK` CHARACTERIZATION ORI...
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| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
60 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
60 |
V |
| VGS | Gate-Source Voltage |
±20 |
V |
| ID | Drain Current (continuous) at TC = 25 |
35 |
A |
| ID | Drain Current (continuous) at TC = 100 |
25 |
A |
| IDM(`) | Drain Current (pulsed) |
140 |
A |
| PTOT | Total Dissipation at TC = 25 |
70 |
W |
| Derating Factor |
0.46 |
W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope |
25 |
V/ns |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Max. Operating Junction Temperature |
This STD30NF06L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.