MOSFET P-Ch 30 Volt 24 Amp
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 24 A | ||
| Resistance Drain-Source RDS (on) : | 0.032 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-251 | Packaging : | Tube |
| Symbol |
Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
30 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS | Gate-Source Voltage |
±16 |
V |
| ID(#) | Drain Current (continuous) at TC = 25 |
24 |
A |
| ID(#) | Drain Current (continuous) at TC = 100 |
24 |
A |
| IDM(`) | Drain Current (pulsed) |
96 |
A |
| PTOT | Total Dissipation at TC = 25 |
70 |
W |
| Derating Factor |
0.47 |
W/ | |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Max. Operating Junction Temperature |
175 |
This STD30PF03L-1 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge.
| Technical/Catalog Information | STD30PF03L-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 24A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 1670pF @ 25V |
| Power - Max | 70W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 28nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD30PF03L 1 STD30PF03L1 |