Features: ` TYPICAL RDS(on) = 0.025` STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY` LOW THRESHOLD DRIVE` LOW GATE CHARGE ` EXTREMELY LOW FIGURE OF MERIT (RDS(on) * Qg)Application· DC-DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Collector-Source Voltage...
STD30PF03L: Features: ` TYPICAL RDS(on) = 0.025` STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY` LOW THRESHOLD DRIVE` LOW GATE CHARGE ` EXTREMELY LOW FIGURE OF MERIT (RDS(on) * Qg)Application· DC-DC...
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| Symbol |
Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
30 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS | Gate-Source Voltage |
±16 |
V |
| ID(#) | Drain Current (continuous) at TC = 25 |
24 |
A |
| ID(#) | Drain Current (continuous) at TC = 100 |
24 |
A |
| IDM(`) | Drain Current (pulsed) |
96 |
A |
| PTOT | Total Dissipation at TC = 25 |
70 |
W |
| Derating Factor |
0.47 |
W/ | |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Max. Operating Junction Temperature |
175 |
This STD30PF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge.