Features: ` TYPICAL RDS(on) = 0.018` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZEDApplication· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-AC CONVERTERS· AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Collect...
STD35NF06: Features: ` TYPICAL RDS(on) = 0.018` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZEDApplication· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-AC CONV...
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| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
60 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
60 |
V |
| VGS | Gate-Source Voltage |
±20 |
V |
| ID | Drain Current (continuous) at TC = 25 |
35 |
A |
| ID | Drain Current (continuous) at TC = 100 |
24.5 |
A |
| IDM(`) | Drain Current (pulsed) |
140 |
A |
| PTOT | Total Dissipation at TC = 25 |
55 |
W |
| Derating Factor |
0.37 |
W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope |
5 |
V/ns |
| Tstg | Storage Temperature |
-55 to 175
|
|
| Tj | Operating Junction Temperature |
This STD35NF06 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.