STD35NF06

Features: ` TYPICAL RDS(on) = 0.018` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZEDApplication· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-AC CONVERTERS· AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Collect...

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STD35NF06 Picture
SeekIC No. : 004507458 Detail

STD35NF06: Features: ` TYPICAL RDS(on) = 0.018` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZEDApplication· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-AC CONV...

floor Price/Ceiling Price

Part Number:
STD35NF06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.018
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED



Application

·  SOLENOID AND RELAY DRIVERS
·  MOTOR CONTROL, AUDIO AMPLIFIERS
·  DC-AC CONVERTERS
·  AUTOMOTIVE ENVIRONMENT



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60

V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
35
A
ID Drain Current (continuous) at TC = 100
24.5
A
IDM(`) Drain Current (pulsed)
140
A
PTOT Total Dissipation at TC = 25
55
W
  Derating Factor
0.37
W/
dv/dt(1) Peak Diode Recovery voltage slope
5
V/ns
Tstg Storage Temperature
-55 to 175
Tj Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 35A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX.



Description

This STD35NF06 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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