Features: ` TYPICAL RDS(on) = 0.016 @ 4.5V` OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` LOW THRESHOLD DRIVE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ...
STD35NF3LL-1: Features: ` TYPICAL RDS(on) = 0.016 @ 4.5V` OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` LOW THRESHOLD DRIVE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE...
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| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
30 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS | Gate-Source Voltage |
±16 |
V |
| ID | Drain Current (continuous) at TC = 25 |
35 |
A |
| ID | Drain Current (continuous) at TC = 100 |
25 |
A |
| IDM(•) | Drain Current (pulsed) |
140 |
A |
| Ptot | Total Dissipation at TC = 25 |
50 |
W |
| Derating Factor |
0.33 |
W/ | |
| EAS(1) | Single Pulse Avalanche Energy |
300 |
mJ |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Max. Operating Junction Temperature |
This application specific Power MOSFET is the third genaration of STMicroelectronis STD35NF3LL-1 unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.