STD38NH02L-1

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 38 A
Package / Case : IPAK
Drain-Source Breakdown Voltage : 24 V
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

Logic level device
R_DS(ON) * Qg Industry's benchmark
Conduction losses reduced
Switching losses reduced
Low threshold drive


Application

Switching application


Specifications

Symbol	Parameter	Value	Unit
Vspike(1)	Drain-source voltage rating	30	V
VDS	Drain-source voltage (VGS = 0)	24	V
VDGR	Drain-gate voltage (RGS = 20 k)	24	V
VGS	Gate- source voltage	±20	V
ID	Drain current (continuous) at TC = 25°	38	A
ID	CDrain current (continuous) at TC = 100°	27	A
IDM(2)	Drain current (pulsed)	152	A
PTOT	Total dissipation at TC = 25°C	40	W
	Derating Factor	0.25	W/°C
EAS(3)	Single pulse avalanche energyC	250	mJ
TJ	Max. operating junction temperature	-55 to 175	°C
Tstg	Storage temperature

1. Garanted when external R_g=4.7 and tf < t_fmax.
2. Pulse width limited by safe operating area.
3. Starting T_j = 25 °C, I_D = 19A, V_DD = 18V

Description

This device STD38NH02L-1 utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

Parameters:

Technical/Catalog Information	STD38NH02L-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	24V
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	13.5 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	1070pF @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	24nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD38NH02L 1 STD38NH02L1