STD3NB50

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 2.8 Ohms


Features:

 TYPICAL R_DS(on) = 2.5 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED


Application

 SWITCH MODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Unit
VCES	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 kW)	500	V
VGE	Gate-Emitter Voltage	± 30	V
ID	Drain Current (continuous) at TC = 25°C (Steady State)	3	A
ID	Drain Current (continuous) at TC = 100°C	1.9	A
IDM ()	Drain Current (pulsed)	12	A
PTOT	Total Dissipation at TC = 25°C (Steady State)	50	W
	Derating Factor	0.4	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg	Storage Temperature	- 65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

Description

Using the latest high voltage MESH OVERLAYÔ process, STD3NB50 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.