STD3NK50Z-1

MOSFET N-Ch, 500V-3ohms Zener SuperMESH 2.3A

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STD3NK50Z-1 Picture
SeekIC No. : 00155698 Detail

STD3NK50Z-1: MOSFET N-Ch, 500V-3ohms Zener SuperMESH 2.3A

floor Price/Ceiling Price

US $ .38~.46 / Piece | Get Latest Price
Part Number:
STD3NK50Z-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1870
  • 1870~2000
  • 2000~5000
  • Unit Price
  • $.46
  • $.4
  • $.38
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 3.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 3.3 Ohms


Features:

` TYPICAL RDS(on) = 2.8
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY)
`100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED



Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)
· LIGHTING



Specifications

Symbol Parameter
Value
Unit
DPAK/IPAK
TO-92
VDS Collector-Source Voltage (VGS = 0 V)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
2.3
0.5
A
ID Drain Current (continuous) at TC = 100
1.45
0.32
A
IDM(`) Drain Current (pulsed)
9.2
2
A
PTOT Total Dissipation at TC = 25
45
3
W
  Derating Factor
0.36
0.025
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2000
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
(`) Pulse width limited by safe operating area
(1) ID 2 di/dt 200A/s, VDD V(BR)DSS



Description

The STD3NK50Z-1 SuperMESH™ series is obtained through an extreme opyimization of ST's well established strip  based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs icluding revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTD3NK50Z-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C2.3A
Rds On (Max) @ Id, Vgs3.3 Ohm @ 1.15A, 10V
Input Capacitance (Ciss) @ Vds 280pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD3NK50Z 1
STD3NK50Z1



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