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STD3NK80Z

Features: ` TYPICAL RDS(on) = 3.8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC· LIGHTINGSpe...

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SeekIC No. : 004507475 Detail

STD3NK80Z: Features: ` TYPICAL RDS(on) = 3.8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· ...

STD3NK80Z Data Sheet

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Part Number:
STD3NK80Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

` TYPICAL RDS(on) = 3.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
· LIGHTING


Specifications

Symbol
Parameter
Value
Unit
  
STP3NK80Z
STF3NK80Z
STD3NK80Z
STD3NK80Z-1
VDS
 Drain-source Voltage (VGS = 0)
800
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
800
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25
2.5
2.5(*)
2.5
A
ID
 Drain Current (continuos) at TC = 100
1.57
1.57(*)
1.57
A
IDM (`)
 Drain Current (pulsed)
10
10(*)
10
A
Ptot
 Total Dissipation at TC = 25
70
25
70
W
 Derating Factor
0.56
0.2
0.56
W/
VESD(G-S)
 Gate source ESD(HBM-C=100pF, R=1.5K)
3000
V
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
V/ns
VISO
 Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg
 Operating Junction Temperature
Storage Temperature
-55 to 150

(`) Pulse width limited by safe operating area
(1) ISD 2.5A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STD3NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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