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STD3NM50-1

Features: ` TYPICAL RDS(on) = 2.5 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` IMPROVED ESD CAPABILITY` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE ` TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDSApplicationThe MDmesh™ family is very suitable for increase the power dens...

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SeekIC No. : 004507479 Detail

STD3NM50-1: Features: ` TYPICAL RDS(on) = 2.5 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` IMPROVED ESD CAPABILITY` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE ` TIGHT PROCESS CONTROL AND HIGH ...

STD3NM50-1 Data Sheet

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Part Number:
STD3NM50-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 2.5  
 `  HIGH dv/dt AND AVALANCHE CAPABILITIES
 `  IMPROVED ESD CAPABILITY
 `  LOW INPUT CAPACITANCE AND GATE CHARGE
 `  LOW GATE INPUT RESISTANCE
 `  TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS


Application

The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)

500
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
3
A
ID Drain Current (continuous) at TC = 100
1.89
A
IDM ( `) Drain Current (pulsed)
12
A
PTOT Total Dissipation at TC = 25
46
W
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K)
4
KV
  Derating Factor
0.37
W/
dv/dt(1) Peak Diode Recovery voltage slope
15
V/ns
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(`) Pulse width limited by safe operating area.
(1) ISD 3A, di/dt 400A/s, VDD  V(BR)DSS, Tj  TJMAX


Description

The STD3NM50-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.




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