Features: `TYPICAL RDS (on) = 1.3`HIGH dv/dt AND AVALANCHE CAPABILITIES`IMPROVED ESD CAPABILITY`LOW INPUT CAPACITANCE AND GATE CHARGE`LOW GATE INPUT RESISTANCE`TIGHT PROCESS CONTROL AND HIGH `MANUFACTORING YIELDSApplicationThe MDmeshTM family is very suitable for increase the power density of high...
STD3NM60: Features: `TYPICAL RDS (on) = 1.3`HIGH dv/dt AND AVALANCHE CAPABILITIES`IMPROVED ESD CAPABILITY`LOW INPUT CAPACITANCE AND GATE CHARGE`LOW GATE INPUT RESISTANCE`TIGHT PROCESS CONTROL AND HIGH `MANUFA...
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The MDmeshTM family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies.
| Symbol | Parameter | Value | Unit | |
STP4NM60 |
STD3NM60 STD3NM60-1 | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 ) |
600 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25 |
4 | 3 | A |
| ID | Drain Current (continuous) at TC = 100 | 52 | 1.9 | A |
| IDM(`) | Drain Current (pulsed) | 6 | 12 | A |
| PTOT | Total Dissipation at TC = 25 |
69 | 42 | W |
| dv/dt(1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | V |
| Tstg Tj |
Operating Junction Temperature Storage Temperature |
-65 to 150 -65 to 150 |
||
The STD3NM60 MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company's PowerMESHTM horizonta layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overal dynamic performance that is significantly better than that of similar completition's products.