STD4NK50ZD-1

MOSFET N Ch 500V 2.4 Ohm 3A

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STD4NK50ZD-1 Picture
SeekIC No. : 00163692 Detail

STD4NK50ZD-1: MOSFET N Ch 500V 2.4 Ohm 3A

floor Price/Ceiling Price

Part Number:
STD4NK50ZD-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 2.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 2.7 Ohms


Features:

100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeability



Application

Switching application


Specifications

Symbol Parameter Value Unit
TO-220 IPAK/DPAK TO-220FP
VDS Drain-source voltage (VGS = 0) 500 V
VDGR Drain-gate voltage (RGS = 20K) 500 V
VGS Gate-source voltage ± 30 V
ID Drain current (continuous) at TC=100°C 3 3 (1) 3 (1) A
ID Drain current (continuous) at TC=100°C 1.9 1.9 (1) 1.9 (1) A
IDM (2) Drain current (pulsed) 12 12 (1) 12 (1) A
PTOT Total dissipation at TC = 25°C 45 20 W
  Derating factor 0.36 0.16 W/°C
VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5K) 2800 V
dv/dt(3) Peak diode recovery voltage slope 15 V/ns
VISO Insulation withstand voltage (DC) - - 2500 V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150 °C


1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 3A, di/dt 200A/s, VDD =80%V(BR)DSS




Description

The  STD4NK50ZD-1 fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology.




Parameters:

Technical/Catalog InformationSTD4NK50ZD-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs2.7 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 310pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs12nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD4NK50ZD 1
STD4NK50ZD1
497 5964 5 ND
49759645ND
497-5964-5



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