Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 200 V
Continuous Drain Current
: 110 A
Configuration
: Single Dual Source
Resistance Drain-Source RDS (on)
: 0.024 Ohms
Package / Case
: ISOTOP
Application HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTER FOR WELDING EQUIPMENT AND
UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVESpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Drain-source Voltage (VGS = 0) |
200 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
200 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
110 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
69
|
A
|
|
IDM (*) |
Drain Current (pulsed) |
440 |
A |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
500 |
W |
|
|
Derating Factor |
4 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
25 |
V/ns |
|
VISO |
Insulation Winthstand Voltage (AC-RMS) |
2500 |
V |
|
Tstg |
Storage Temperature |
65 to 150 |
°C |
|
Tj
|
Max.Operating Junction Temperature
|
150 |
°C |
DescriptionUsing the latest high voltage MESH OVERLAY™ process, STE110NS20FD STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Parameters: | Technical/Catalog Information | STE110NS20FD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 110A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 7900pF @ 25V |
| Power - Max | 500W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 504nC @ 10V |
| Package / Case | ISOTOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STE110NS20FD
STE110NS20FD
497 2657 5 ND
49726575ND
497-2657-5
|
STE110NS20FD Data Sheet
