STE180NE10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 180 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.006 Ohms
Package / Case : ISOTOP


Features:

 TYPICAL R_DS(on) = 4.5 mW
 100% AVALANCHE TESTED
 LOW INTRINSIC CAPACITANCE
 GATE CHARGE MINIMIZED
 REDUCED VOLTAGE SPREAD


Application

 SMPS & UPS
 MOTOR CONTROL
 WELDING EQUIPMENT
 OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS


Specifications

Symbol	Parameter	Value	Unit
VCES	Drain-source Voltage (VGS = 0)	100	V
VDGR	Drain- gate Voltage (RGS = 20 kW)	100	V
VGE	Gate-Emitter Voltage	± 20	V
ID	Drain Current (continuous) at TC = 25°C (Steady State)	180	A
ID	Drain Current (continuous) at TC = 100°C	119	A
IDM (*)	Drain Current (pulsed)	540	A
PTOT	Total Dissipation at TC = 25°C (Steady State)	360	W
	Derating Factor	2.88	W/°C
VISO	Insulation Winthstand Voltage (AC-RMS)	2500	V
Tj	Operating Junction Temperature	- 65 to 150	°C
Tstg	Storage Temperature	150	°C

Description

This STE180NE10 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.