Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.13 Ohms
Drain-Source Breakdown Voltage
: 800 V
Configuration
: Single Dual Source
Continuous Drain Current
: 45 A
Package / Case
: ISOTOP
Features: TYPICAL RDS(on) = 0.11
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITYApplication HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR WELDING EQUIPMENTSpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Drain-source Voltage (VGS = 0) |
800 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
800 |
V |
|
VGE |
Gate-Emitter Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C |
45
28 |
A
A |
|
IDM (*) |
Drain Current (pulsed) |
180 |
A |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
600 |
W |
|
Ptot |
Derating Factor |
5 |
W/°C |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5k) |
7 |
KV |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
8 |
V/ns |
|
VISO |
Insulation Withstand Voltage (AC-RMS) from All Four
Terminals to External Heatsink |
2500 |
V |
|
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
- 65 to 150 |
°C |
DescriptionThe STE45NK80ZD SuperFREDMesh™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh ™ products.
Parameters: | Technical/Catalog Information | STE45NK80ZD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 45A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 22.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 26000pF @ 25V |
| Power - Max | 600W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 781nC @ 10V |
| Package / Case | ISOTOP |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STE45NK80ZD
STE45NK80ZD
497 5387 5 ND
49753875ND
497-5387-5
|
STE45NK80ZD Data Sheet
