STE48NM60

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Packaging: Tube
Supplier Device Package: ISOTOP?
Manufacturer: STMicroelectronics
Package / Case: ISOTOP
Series: MDmesh™
Vgs(th) (Max) @ Id: 5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 48A
Power - Max: 450W
Drain to Source Voltage (Vdss): 650V
Rds On (Max) @ Id, Vgs: 110 mOhm @ 22.5A, 10V
Gate Charge (Qg) @ Vgs: 134nC @ 10V
Input Capacitance (Ciss) @ Vds: 3800pF @ 25V


Features:

` TYPICAL R<sub>DS</sub>(on) = 0.09
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain-gate Voltage (RGS = 20 k)	600	V
VGS	Gate- source Voltage	±30	V
ID	Drain Current (continuos) at TC = 25	48	A
ID	Drain Current (continuos) at TC = 100	30	A
IDM (`)	Drain Current (pulsed)	192	A
Ptot	Total Dissipation at TC = 25	450	W
	Derating Factor	3.57	W/
dv/dt (1)	Peak Diode Recovery voltage slope	15	V/ns
Tstg	Storage Temperature	-65 to 150
Tj	Operating Junction Temperature	150

(`) Pulse width limited by safe operating area.

(1) I_SD 48A, di/dt 400 µA, V_DD V_(BR)DSS, T_j T_JMAX.


Description

The STE48NM60 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.