Collector- Emitter Voltage VCEO Max
:
Emitter- Base Voltage VEBO
:
Maximum DC Collector Current
:
Configuration
:
Maximum Operating Frequency
:
Maximum Operating Temperature
:
Transistor Polarity
: NPN
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: ISOTOP
DC Collector/Base Gain hfe Min
: 3
Features: HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION
ULTRA LOW EQUIVALENT ON RESISTANCE
VERY FAST-SWITCH, UP TO 150 kHz
ULTRA LOW CISS
LOW DYNAMIC VCS(ON)Application INDUSTRIAL CONVERTERS
WELDINGSpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
VCS(SS) |
Collector-Source Voltage (VBS = VGS = 0 V) |
1000 |
V |
|
VBS(OS) |
Base-Source Voltage (IC= 0, VGS = 0 V) |
40 |
V |
|
VSB(OS) |
Source-Base Voltage (IC= 0, VGS = 0 V) |
12 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
IC |
Drain Current (continuous) at Tc = 25 oC |
24 |
A |
|
ICM |
Collector Peak Current (tp < 5ms) |
150 |
A |
|
IB |
Base Current |
10 |
A |
|
IBM |
Base Peak Current (tp < 1ms) |
50 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
160 |
W |
|
Tstg |
Storage Temperature |
-65 to 150 |
oC |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC |
|
VISO |
Insulation Withstand Voltage (AC-RMS) |
2500 |
V |
DescriptionThe STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.
Parameters: | Technical/Catalog Information | STE50DE100 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Applications | - |
| Transistor Type | NPN - Emitter Switched Bipolar |
| Voltage - Rated | 1000V (1kV) |
| Current Rating | 50A |
| Package / Case | ISOTOP |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STE50DE100
STE50DE100
497 3567 5 ND
49735675ND
497-3567-5
|
STE50DE100 Data Sheet
