Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.08 Ohms
Configuration
: Single Dual Source
Continuous Drain Current
: 53 A
Package / Case
: ISOTOP
Features: TYPICAL RDS(on) = 0.07 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZEDApplication HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERSpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Drain-source Voltage (VGS = 0) |
500 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
500 |
V |
|
VGE |
Gate-Emitter Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
53 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
33 |
A
|
|
IDM (*) |
Drain Current (pulsed) |
212 |
A |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
460 |
W |
|
|
Derating Factor |
3.68 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
|
VISO |
Insulation Winthstand Voltage (AC-RMS) |
2500 |
V |
|
Tj |
Operating Junction Temperature |
- 65 to 150 |
°C |
|
Tstg |
Storage Temperature |
150 |
°C |
DescriptionThe STE53NC50 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Parameters: | Technical/Catalog Information | STE53NC50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 53A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 27A, 10V |
| Input Capacitance (Ciss) @ Vds | 11200pF @ 25V |
| Power - Max | 460W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 434nC @ 10V |
| Package / Case | ISOTOP |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STE53NC50
STE53NC50
497 2776 5 ND
49727765ND
497-2776-5
|
STE53NC50 Data Sheet
