STF6NK70Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 700 V
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1.8 Ohms


Features:

 TYPICAL RDS(on) = 1.5
 EXTREMELY HIGH dv/dt CAPABILITY
 IMPROVED ESD CAPABILITY
 100% AVALANCHE RATED
 GATE CHARGE MINIMIZED
 VERY LOW INTRINSIC CAPACITANCES
 VERY GOOD MANUFACTURING REPEATIBILITY


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC


Specifications

Symbol	Parameter	Value		Unit
		STP6NK70Z	STF6NK70Z
VDS	Drain-source Voltage (VGS = 0)	700		V
VDGR	Drain-gate Voltage (RGS = 20 kW)	700		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25°C	5	5 (*)	A
ID	Drain Current (continuos) at TC = 100°C	3.15	3.15 (*)	A
IDM ()	Drain Current (pulsed)	20	20(*)	A
PTOT	Total Dissipation at TC = 25°C	110	30	W
	Derating Factor	0.87	0.24	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150		°C °C

Description

The STF6NK70Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.